Question: EXPERIMENT NO 2 PN JUNCTION DIODE CHARACTERISTICS 2.1 AIM To Plot The V-I Characteristics Of A PN Junction Diode In Both Forward And Reverse Directions. Simulator Procedure (as performed through the Online Labs) Select the characteristics of diode from the drop down list. The Static Forward resistance of 1N4007 is _____ . Experimental Procedure¶. The VI Characteristics of the PN Junction Diode in Forward Bias. This is the symbolical representation of a semiconductor diode:. To draw the I-V characteristic curve of a p-n junction in forward bias and reverse bias. The width of the depletion region decreases in the p-n junction diode during forward bias. Plot a graph with reverse voltage along X axis and reverse current along Y axis. It is also important to note here that the equilibrium barrier potential can be altered. PN rectifying diode (D1N4002) 2. Forward and reverse characteristics at room temperature: Turn on the temperature control unit and set the temperature switch to \(25^oC\).The power supply for the p-n junction has two independent outputs and two independent voltage control knobs for forward and reverse operation respectively. Imagine a p-n junction with metallic contacts at both the ends for application of external voltage. Apparatus:-Experimental kit and patch cords. a) Forward Bias of PN Junction Diode: The Cut in Voltage or Knee Voltage (Vγ) of 1N4007 is _____Volts. The Dynamic Forward resistance of 1N4007 is _____ . When a diode is connected in a Forward Bias condition, a negative voltage is applied to the N-type material and a positive voltage is applied to the P-type material. The potential barrier of this p-n junction is reduced when a forward-bias voltage is applied to it. Working Principle of P-N junction diode: In a P-N junction Diode, we will consider the p-n junction with a forward-bias voltage employed. Connect the leads from the junction to the FWD VOLT output jacks, … Objective: To study the forward and reverse bias characteristics of various types of diodes including ordinary p-n junction diodes, Zener diodes, light-emitting diodes (LED), Schottky diodes, and germanium diodes. Materials Required. Result: Volt-Ampere Characteristics of P-N Diode are studied. Schottky Diode (MBD101) 3. If this external voltage becomes greater than the value of the potential barrier, approx. A PN junction is said to be forward-biased when the p-type region of a junction is connected to the positive terminal of a voltage source and the n-type region is connected to the voltage source’s negative terminal.. EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. Theory:-A Semiconductor diode is prepared by joining P and N sections of a semi conducting … In the image above, the arrow indicates the direction of current when the diode is under forward bias. Select the diode … Zener Diode (D1N750) 4. Reverse bias characteristics. Forward Biased PN Junction Diode. The graph shows the reverse V-I characteristics of the given p-n junction diode. List of Parts: 1. To draw the I-V characteristic curve of a p-n junction in forward bias and reverse bias. Find Cut In Voltage , Static And Dynamic Resistance In Forward Direction At Forward Current Of 2mA & 8mA Respectively. Forward Biased PN Junction. We can determine the current-voltage characteristics. Pre-Lab: Acquire the necessary parts to perform the experiment. This is a semiconductor diode. Is _____Volts, Static and Dynamic Resistance in Forward bias of 2mA 8mA. Diode & ZENER diode Forward Current of 2mA & 8mA Respectively performed through the Online )... 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